晶体管-IGBT-阵列 - 欧可尔电子(深圳)有限公司

MC56F8357VPYE L293E MB88152APNF-G-111-JNERE1 V28C5H50BL V24C24T150BL2 V24C15T100BL2 DS18B20+ SN74LVCC3245ADWRG4 KSZ8081RNB-EVAL V28A24C200BG2

Manufacturer	Packaging	Series	ProductStatus	IGBTType	Configuration	Voltage-CollectorEmitterBreakdown(Max)	Current-Collector(Ic)(Max)	Power-Max	Vce(on)(Max)@VgeIc	Current-CollectorCutoff(Max)	InputCapacitance(Cies)@Vce	Input	NTCThermistor	OperatingTemperature	MountingType
ASEMI IXYS	Box Bulk Tape & Reel (TR) Tube	- BIMOSFET™ ISOPLUS™	Active Obsolete	- NPT PT	Full Bridge Half Bridge	1200 V 1700 V 2500 V 3000 V 600 V	18 A 23 A 30 A 32 A 33 A 34 A 38 A 40 A 43 A 50 A 63 A	100 W 125 W 130 W 140 W 150 W 200 W 230 W	2.15V @ 15V, 35A 2.1V @ 15V, 15A 2.2V @ 15V, 25A 2.4V @ 15V, 20A 2.6V @ 15V, 30A 2.7V @ 15V, 22A 2.9V @ 15V, 20A 3.1V @ 15V, 20A 3.2V @ 15V, 20A 6V @ 15V, 16A	- 10 µA 100 µA 125 µA 150 µA 2.1 mA 200 µA 35 µA 400 µA 600 µA	- 1.1 nF @ 25 V 1.19 nF @ 15 V 1.2 nF @ 25 V 1.6 nF @ 25 V 2 nF @ 25 V 2.2 nF @ 25 V 2.4 nF @ 25 V	Standard	No	- -55°C ~ 150°C (TJ)	Surface Mount Through Hole